Trench-type SiC MOSFETs reduce on-resistance by 50%

Article By : Rohm Semiconductor

Rohm's third generation of SiC MOSFETs, SBDs and modules features switching capability, energy conversion efficiency, reduced on-resistance.

Rohm Semiconductor has rolled out the third generation of its SiC MOSFETs, SiC Schottky Barrier Diodes (SBDs) and SiC modules.

The third-gen trench-type SiC MOSFETs reduce on-resistance by 50% across a temperature range and reduce input capacitance by 35%, according to Rohm.

To do this, it combines low loss with fast switching capability. This then helps reduce the size of peripheral components such as coils and capacitors by increasing switching frequency. The SiC MOSFETS also contributes to improving conversion efficiency.

The SCT3080KL 1200V SiC MOSFET series comes in a TO-247 package. 650V FETs in that package are available with 120mΩ to 17mΩ on-resistance and with 160mΩ to 22mΩ on-resistance when at 1,200V. Rohm will also offer an AECQ qualified SiC MOSFET based on its second-generation planar series.

The third generation of SiC Schottky Barrier Diodes (SBD) features low forward voltage (VF) and reverse leakage current (lR) over a temperature range among currently available SiC SBDs. They also feature high-surge current capability demanded by power supply applications.

In addition to its recently announced TO220AC devices at 650V/6A, 8A and 10A, Rohm adds D2PAK and TO220FM devices, which offers lower current options such as 2A and 4A. SiC diodes exhibit short reverse recovery time compared with silicon-based devices, practically useful for high-speed switching.

Full SiC modules include chopper type modules for converters and integrate both trench SiC MOSFETs and SiC SBDs. In addition to two-in-one type modules, 1200V/120A, 180A and 300A chopper type modules will also be available soon. Rohm says it is also working on a new power module which will exhibit lower stray inductance.

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