Mouser Electronics is offering engineers and designers an expansive resource for power management information.
Transphorm will demonstrate leading-edge R&D results from its 1200V GaN device at the ISPSD 2022 conference.
ADI's wBMS is now certified to the highest standard of automotive cybersecurity engineering and management.
Microchip's new industrial grade TrustFLEX ECC608 and the automotive grade Trust Anchor TA100 are designed for Qi 1.3 power transmitters.
The demand for fast charging has driven the unprecedented evolution of high-density adapters.
Analog Devices and Gridspertise are collaborating to advance the resiliency and quality of smart grids around the world.
While high-power, high-frequency SiC and GaN-based third generation components and systems are becoming widely used, fourth generation ultra-wide bandgap gallium…
Atomera's quantum engineered thin-film, dubbed MST, is an epitaxially-grown film consisting of a non-semiconductor material such as oxygen inserted into…
Infineon Technologies successfully held its first cross-industry Eco Conference in Shenzhen, China.
Today's wide-bandgap semiconductors, including GaN and SiC, are exceeding the capabilities of traditional silicon-based devices.
Although all foundries are furiously increasing capital expenditures to expand capacity, unrealized future expansion does not ease existing supply issues.
Navitas Semiconductor has opened a new EV design center in Shanghai, China.