Rohm's third generation of SiC MOSFETs, SBDs and modules features switching capability, energy conversion efficiency, reduced on-resistance.
A car designed using a vanadium redox flow battery and iodine clock reactions, won this year's Chem-E-Car Competition held in…
The LTM2885 micromodule transceiver protects from ground-to-ground differentials with 6.5kV reinforced isolation and clearance distances.
AmP represents an FPGA-style approach to building power management ICs that can address about 90% of the topologies of power…
AnDapt's line of configurable ICs combines power MOSFETs, analog and digital circuitry and can be used to create a wide…
Toshiba has used its U-MOS IX-H series trench process to deliver efficiency across a wide range of load conditions by…
The TVS features patented PAR construction for a temperature range of −65°C to 185°C.
The solution addresses SiC IPMs in hermetically sealed packages currently in development for harsh environments.
The GaN power market, however, remains small compared to the gigantic $335 billion silicon semiconductor market.
The chipset enables 1W transfer just 11mm-dia coils in the receiver or up to 3W using larger coils and a…
2016 is a sequel to the M&A mania of 2015, ringing $55.3 billion in M&A agreement value in 3 quarters.
The LTC3871 provides bidirectional DC/DC control and battery charging between the 12V and 48V boardnets.