2021-09-21 - STMicroelectronics

Single-chip GaN Gate Driver Boosts Speed and Integration in Industrial, Home Automation

ST's STDRIVEG600 half-bridge gate driver has high current output and 45ns propagation delay to handle high-frequency switching of GaN enhancement-mode…

2021-09-06 - Infineon Technologies

Infineon and Panasonic Accelerate GaN Technology Development for 650V Power Devices

Infineon and Panasonic have signed an agreement for the joint development and production of their second generation GaN technology.

2021-08-27 - Stephen Las Marias

Navitas’ Gene Sheridan Highlights Why GaN Technology for Power Electronics

Navitas Co-Founder and CEO Gene Sheridan talks about the key advantages of using GaN, and how it edges out silicon,…

2021-07-13 - Maurizio Di Paolo Emilio

The Next Wave of GaN and SiC

At the recent PCIM Europe, several companies showed their latest innovations in GaN and SiC and offered insights on where…

2021-05-20 - Strategy Analytics

RF GaN Market Tops $1B in 2020

Revenue from RF GaN-enabled devices experienced another year of fast growth, increasing by 30% in 2020 to cross the $1…

2021-03-19 - Stefano Lovati

The Benefits of Using GaN for RF Applications

Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.

2021-01-27 - Maurizio Di Paolo Emilio & Nitin Dahad

AspenCore Book Highlights GaN’s role for the New Power Electronics World

Why Wide BandGap (WBG), and why GaN specifically? AspenCore Media’s “AspenCore Guide to Gallium Nitride: A New Era for Power…

2020-12-21 - Wise-Integration

Smaller, Faster and more efficient Power Supplies

Wise-Integration announced its WiseGan plateform an integrated 650V GaN half-bridge, in a 6mm x 8mm PQFN package...

2020-10-13 - Keysight Technologies

Still Looking for the Best Approach to Improve Power Efficiency?

Webinar: Advanced Wide-bandgap High-Power Semiconductor Measurement Techniques

2020-10-05 - Nitin Dahad and Maurizio Di Paolo Emilio

NXP Advance 5G with New 150mm GaN Fab in Arizona

NXP opened a new GaN fab in Arizona to focus primarily on the communications infrastructure market for 5G radio systems,…

2020-07-30 - Maurizio Di Paolo Emilio 

Power GaN and SiC: Entering a New Era

Yole Développement estimated a general view of wide bandgap materials such as Gallium Nitride and Silicon Carbide...

2020-06-16 - Maurizio Di Paolo Emilio

What Does The Future Hold For GaN/SiC?

While silicon still dominates the market, the emergence of Wide-Bandgap devices will soon direct technology toward new, more efficient solutions.