ST’s Muggeri Talks Landscape, Road Ahead for SiC and GaN

Article By : Stephen Las Marias

ST's Francesco Muggeri talks about the role of SiC and GaN in power electronics, their advantages over silicon, and his outlook for the industry.

What’s happening in the power management space amid the never-ending drive to lower power consumption in more and more complex technologies and applications? What about in applications dealing with higher and higher voltages? This month’s In Focus highlights the various design developments and manufacturing strategies happening in the power management segment.


Francesco Muggeri is the Regional VP of Marketing and Applications for Power Discrete and Analog Products at STMicroelectronics. He leads ST’s Industrial Competence Centers, including the Motor Control Competence Center, Power & Energy Competence Center, and Automation Competence Center in Asia, and coordinates ST’s global Mass Market Industrial Task Force, with regards to consumer segment.

In an interview for EE Times Asia In Focus, Muggeri talks about the role of wide bandgap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) in power electronics, their advantages over silicon, and how the ecosystem is developing around them.

Muggeri highlights ST’s SiC and GaN strategies, some of the latest product and technology developments from the company for power electronics applications, and his outlook for the industry.

Watch the video interview below.

 

 

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