Design

2022-04-14 - Stephen Las Marias

Interview with fast SiC CEO CT Yen

In an interview with EETimes Asia, Cheng-Tyng (CT) Yen, CEO of fast SiC semiconductor, speaks about the advantages of using…

2022-04-08 - Stephen Las Marias

CGD’s Andrea Bricconi Talks GaN Technology

In an interview for EETimes Asia In Focus, Cambridge GaN Devices (CGD) VP of Business Development Andrea Bricconi talks about…

2022-03-31 - Tektronix

Accurately Measuring High Speed GaN Transistors

The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture…

2022-03-30 - Siran Wang, Monolithic Power Systems Inc.

Elevating High-Density Adapter Designs with Integrated Capacitive Isolation

The demand for fast charging has driven the unprecedented evolution of high-density adapters. In practical adapter designs, there are countless…

2022-03-28 - Ray-Hua Horng

The Principles, Advantages and Industry Prospects of Fourth Generation Semiconductor Ga2O3 Technology

Technical Principles and Advantages Although the current semiconductor industry is dominated by IC and electronic components based on Si substrates…

2022-03-25 - Christopher Loberg, Tektronix

Measuring SiC MOSFET Signals Effectively

Silicon carbide (SiC) MOSFETs are increasingly being used in industries ranging from electric vehicles and solar power, to backup power…

2022-03-23 - imec

Monolithic Integration of GaN Components Boosts Power Integrated Circuits

Stefaan Decoutere, Program Director of GaN Power Electronics at imec, talks about the successful co-integration of high-performance Schottky barrier diodes…

2022-03-21 - Reinhard Zimmermann, RECOM Power GmbH

Making Transistor Circuits More Robust in Power Electronics

Fast IGBTs have so far been the last word in power electronics, providing the best of both worlds in FETs…

2022-03-18 - Takamasa Arai, Ryo Takeda, Bernhard Holzinger, and Michael Zimmerman, and Mike Hawes, Keysight

Dynamic On-Resistance Measurement Technique for GaN Power Transistors

Dynamic on-state resistance (RDS(ON)) is critical for the reliable and stable operation of GaN power transistors. However, many engineers are…

2022-03-11 - Dr. Paul Kierstead and Jianwen Shao, Wolfspeed

Silicon Carbide Meets Power V2G Demands in EV Fast-Charger Market

The recent bounce back in the automotive industry, a vigorous resurgence in consumer interest for green technologies, and increasing regulatory…

2022-03-10 - Peter Friedrichs

The Benefits and Use Cases of SiC MOSFETs

Silicon carbide transistors are increasingly used in high-voltage power converters as they can meet the stringent requirements regarding size, weight,…

- Hwee Yng Yeo, Keysight Technologies

The Energy Ecosystem—Technologies Driving the Future of E-Mobility

Climate concerns and evolving consumer preferences are driving technology innovations for electric vehicles (EVs) as a means towards a greener…