In an interview with EETimes Asia, Cheng-Tyng (CT) Yen, CEO of fast SiC semiconductor, speaks about the advantages of using…
In an interview for EETimes Asia In Focus, Cambridge GaN Devices (CGD) VP of Business Development Andrea Bricconi talks about…
The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture…
The demand for fast charging has driven the unprecedented evolution of high-density adapters. In practical adapter designs, there are countless…
Technical Principles and Advantages Although the current semiconductor industry is dominated by IC and electronic components based on Si substrates…
Silicon carbide (SiC) MOSFETs are increasingly being used in industries ranging from electric vehicles and solar power, to backup power…
Stefaan Decoutere, Program Director of GaN Power Electronics at imec, talks about the successful co-integration of high-performance Schottky barrier diodes…
Fast IGBTs have so far been the last word in power electronics, providing the best of both worlds in FETs…
Dynamic on-state resistance (RDS(ON)) is critical for the reliable and stable operation of GaN power transistors. However, many engineers are…
The recent bounce back in the automotive industry, a vigorous resurgence in consumer interest for green technologies, and increasing regulatory…
Silicon carbide transistors are increasingly used in high-voltage power converters as they can meet the stringent requirements regarding size, weight,…
Climate concerns and evolving consumer preferences are driving technology innovations for electric vehicles (EVs) as a means towards a greener…