fast SiC CEO CT Yen talks about the advantages of using SiC, some of the challenges in SiC manufacturing, and his outlook for the industry.
CGD's Andrea Bricconi talks about why GaN technology is a perfect fit for the many changes happening in the power management industry.
The increase in switching speed offered by GaN transistors requires good measurement technology, as well as good techniques to capture important details of high-speed waveforms.
The demand for fast charging has driven the unprecedented evolution of high-density adapters.
While high-power, high-frequency SiC and GaN-based third generation components and systems are becoming widely used, fourth generation ultra-wide bandgap gallium oxide, diamond and other new generation materials are gaining popularity.
The switching characteristics that make SiC MOSFETs attractive also pose challenges for accurate validation measurements.
Stefaan Decoutere of imec talks about the successful co-integration of Schottky barrier diodes and depletion-mode HEMTs on a p-GaN HEMT-based 200V GaN-on-SOI smart power IC platform.
SiC FETs have been seeing increasing use in more demanding applications, as they allow higher switching frequencies while reducing switching losses.
This article discusses a measurement technique of dynamic on-state resistance using a double pulse test system with a clamp circuit.
Here's a look at how SiC technology continues to be a leading solution for power and vehicle-to-grid (V2G) demands in the fast growing fast-charger market.
Increasingly, designers are switching to SiC and GaN power devices to leverage faster switching frequencies, as well as higher voltage and thermal operation ranges in EVs.