Renesas' AE5-generation IGBTs, to be mass produced starting in the first half of 2023, are aimed at next-generation electric vehicle (EV) inverters.
Renesas Electronics Corp. has developed a new generation of Si-IGBTs (silicon insulated gate bipolar transistors) that will be offered in a small footprint while providing low power losses. Aimed at next generation electric vehicle (EVs) inverters, AE5-generation IGBTs will be mass produced starting in the first half of 2023 on Renesas’ 200- and 300-mm wafer lines at the company’s factory in Naka, Japan.
Additionally, Renesas will ramp up production starting in the first half of 2024 at its new power semiconductor 300-mm wafer fab in Kofu, Japan to meet the growing demand for power semiconductor products.
The silicon based AE5 process for IGBTs achieve a 10% reduction in power losses compared to the current-generation AE4 products, a power savings that will help EV developers save battery power and increase driving range. In addition, the new products are approximately 10% smaller while maintaining high robustness.
The new Renesas devices achieve the industry’s highest level of performance for IGBTs by optimally balancing low power loss and robustness trade offs. Moreover, the new IGBTs significantly improve performance and safety as modules by minimizing parameter variations among the IGBTs and providing stability when operating IGBTs in parallel. These features provide engineers greater flexibility to design smaller inverters that achieve high performance.
“Demand for automotive power semiconductors is rapidly growing, as EVs become more widely available,” said Katsuya Konishi, Vice President of Renesas’ Power System Business Division. “Renesas’ IGBTs provide highly reliable, robust power solutions that build on our experience in manufacturing automotive-grade power products for the last seven years. With the latest devices soon to be in mass production, we are providing optimal features and cost performance for mid-range EV inverters that are expected to grow rapidly in the future.”
Key Features of the New-Generation IGBTs (AE5)
Inverter Solution for EVs
In EVs, the motors that power vehicles are controlled by inverters. Switching devices such as IGBTs are critical in minimizing power consumption for EVs, as inverters convert DC power to the AC power that electric vehicle motors require. To assist developers, Renesas offers the xEV Inverter Reference Solution, a working hardware reference design that combines an IGBT, microcontroller, power management IC (PMIC), gate driver IC, and fast recovery diode (FRD).
Renesas also offers the xEV Inverter Kit, which is a hardware implementation of the reference design. In addition, Renesas provides a motor parameter calibration tool and the xEV Inverter Application Model and Software, which combines an application model and sample software for controlling the motor. These tools and support programs from Renesas are designed to help customers simplify their software development efforts.
Renesas plans to add the new-generation IGBTs to these hardware and software development kits to enable even better power efficiency and performance in a smaller footprint.
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