The low temperature hybrid wafer bonding allows wafers to be bonded with fine pitch 3D electrical interconnect without requiring bond pressure.
China semiconductor foundry SMIC has signed a technology transfer and licence agreement for Invensas’ Direct Bond Interconnect (DBI) technology, to be able to offer this bonding technology for use by image sensor manufacturing customers.
“This technology is a key enabler for the fabrication of 3D stacked image sensors, and by working closely with Invensas, we will accelerate the development and commercialisation of a new generation of imaging products for our customers,” said Dr. Tzu-Yin Chiu, chief executive officer and executive director of SMIC.
The DBI technology is a low temperature hybrid wafer bonding that allows wafers to be bonded with fine-pitch 3D electrical interconnect without requiring bond pressure. DBI 3D interconnect can eliminate thru silicon vias (TSVs) reducing die size and cost towards pixel level interconnect for advanced image sensors.