Microsemi Corp. and Analog Devices Inc. have jointly developed a scalable Silicon Carbide (SiC) driver reference design based on Microsemi's SiC MOSFETs and ADI's ADuM4135 5KV isolated gate driver.

The dual SiC MOSFET driver reference design provides user-friendly design guides enabling faster time to market for customers using Microsemi SiC MOSFETs and supports the transition to Microsemi’s next generation SiC MOSFETs.

Analog Devices' isolated gate drivers with DESAT and other protection features provide strong gate drive capability (6A) coupled with robust electrical isolation that's important for long life and safe operation in high voltage power conversion systems, claimed the company.

The reference design provides a highly isolated SiC MOSFET dual-gate driver switch for evaluating SiC MOSFETs in a number of topologies. This includes modes optimised for half-bridge switching with synchronous dead time protection and asynchronous signal transfer with no protection. It can also be configured to provide concurrent drive with the requirement to study unclamped inductive switching (UIS) or double pulse testing.

An engineering tool

The reference design was developed for Microsemi SiC MOSFET discrete devices and modules and serves as an engineering tool for the evaluation of its portfolio of SiC devices. The board supports the modification of gate resistor values to accommodate most Microsemi discretes and modules.

"The dual SiC MOSFET driver reference design not only enables Microsemi customers to accelerate their product development efforts, but also accommodates the roll-out of our next-generation SiC MOSFETs to ensure a smooth transition for the end user," said Jason Chiang, strategic marketing manager for Microsemi, in a press release.

ADI's collaboration with Microsemi is through Microsemi's "Accelerate Ecosystem," which brings together silicon, IP, systems, software and design experts to deliver validated board and system-level solutions for that company's end customers.