The automotive-grade diodes feature low forward voltage drop for optimal efficiency in electric vehicle applications, according to ST.
STMicroelectronics has released a full range of 1,200V silicon-carbide (SiC) Junction Barrier Schottky (JBS) diodes covering current ratings from 2A to 40A, including automotive-qualified devices.
ST’s SiC-diode manufacturing process creates robust devices with low forward voltage, allowing circuit designers achieve efficiency and reliability using diodes with lower current rating. This makes SiC technology more accessible for cost-conscious applications including solar inverters, industrial motor drives, home appliances and power adapters, according to the company.
The 1,200V SiC diodes' high efficiency margin delivers benefits for automotive equipment such as On-Board Battery Chargers (OBC) and charging stations for Plug-In Hybrid or Electric Vehicles (PHEV/EV). On the other hand, overall robust electrical performance ensures a perfect fit in telecom and server power supplies, high-power industrial Switched-Mode Power Supplies (SMPS) and motor drives, uninterruptible power supplies (UPS) and large solar inverters.
Achieving the lowest VF also helps reduce operating temperature and extend lifetime, according to ST.
The 1,200V SiC diodes come in surface-mount DPAK HV (High-Voltage) and D²PAK, or through-hole TO-220AC and TO-247LL (Long-Lead) packages. Budgetary pricing starts at $2.50 for the 10A STPSC10H12D in TO-220AC, for orders of 1,000 pieces.