The technology includes the necessary components such as RF-CMOS devices and passive devices, including EEPROM IP.
South Korea-based MagnaChip Semiconductor has started offering 0.13µm EEPROM-based RF-CMOS technology, which was developed using a P-type substrate tailoured specifically for wireless applications.
The primary purpose for developing the 0.13µm EEPROM based RF-CMOS technology is to support smart wireless MCU products, which frequently use BLE (Bluetooth Low Energy) as the main wireless communications technology. BLE, also called Bluetooth Smart, is a Bluetooth technology that transmits and receives low-power and low-capacity data, reaching a radius of 10 metres using the 2.4GHz frequency range. MagnaChip’s technology consumes less power, making it suitable for various applications that utilise smart wireless MCUs, such as smartwatches, smart remote controllers, toys, beacons, wearables, 3D glasses and sensor hub wireless chargers.
Furthermore, MagnaChip's RF-CMOS technology includes the necessary components such as RF-CMOS devices and passive devices including EEPROM IP, which also uses up to 64K bytes of high density. Also, RF modelling for CMOS, HR resistor, MIM capacitor, MOM capacitor, varactor diodes and inductor components was completed for the RF design, and the 4µm-thick metal process was developed for the RF design. In particular, low Vt N/PMOS was developed to improve the transistor's RF performance.
To capitalise on features such as efficient power consumption and wide usability, MagnaChip has been developing various RF-CMOS technologies and will begin full-scale mass production in 2017. MagnaChip is offering RF-SOI and also RF-CMOS processes, which demonstrates that the company has made significant progress in becoming an RF process specialty foundry. Due to increased usage of smart wireless MCU products in smart homes, the MCU market is expected to show significant growth in the near future, according to industry observers.