Infineon Technologies has strengthened its supply security for SiC base material through a supply contract with Showa Denko.
Amid the growing demand for silicon carbide (SiC)-based devices, Infineon Technologies AG has strengthened its supply security for an extensive range of SiC base material including epitaxy through a supply contract with Japanese wafer manufacturer Showa Denko K.K. SiC enables highly efficient and robust power semiconductors that are used in the fields of photovoltaic, industrial power supply, and charging infrastructure for electric vehicles (EVs).
“Our broad and fast growing portfolio demonstrates Infineon’s leading role in supporting and shaping the market for SiC-based semiconductors which is expected to grow 30 to 40 percent annually over the next five years,” said Peter Wawer, President of the Industrial Power Control Division at Infineon. “The expansion of our supplier base with Showa Denko for wafers in this growth market marks an important step in our multisourcing strategy. It will support us to reliably meet the growing demand mid- to long-term. Furthermore, we plan to collaborate with Showa Denko on the strategic development of the material to improve the quality while cutting costs at the same time.”
“We are proud to be able to provide Infineon with Best-in-Class SiC material and our cutting-edge epitaxy technology,” said Jiro Ishikawa, Senior Managing Corporate Officer from Showa Denko K.K. “Our aim is to continuously improve our SiC material and develop the next technology. We value Infineon as an excellent partner in this regard.”
The contract between Infineon and Showa Denko K.K. has a two-year term with an extension option.