Effective Measurements of Signals in Silicon Carbide (SiC) Power Electronics Systems

After years of research and design, Silicon Carbide (SiC) power devices are rapidly being designed into a variety of power electronics applications. The shift from silicon to SiC is driving new energy-efficient designs from the ground up.

What follows are some questions that a power system designer needs to consider when they shift to SiC;
• Is my test equipment capable of accurately measuring the fast switching dynamics in a SiC system?
• How can I accurately optimize gate drive performance and deadtime?
• Will common-mode transients affect the accuracy of measurements?
• Is the ringing that I see real, or the result of probe response?

We will discuss these questions and how to address these challenges.