Electrical Characterization of Carbon Nanotube Transistors (CNT FETs) with the 4200A-SCS Parameter Analyzer

Carbon nanotubes (CNTs) have been the subject of a lot of scientific research in recent years, due not only to their small size but to their remarkable electronic and mechanical properties and many potential applications.

The problems associated with attempting to scale down traditional semiconductor devices have led researchers to look into CNT-based devices, such as carbon nanotube field effect transistors (CNT FETs), as alternatives. Because they are not subject to the same scaling problems as traditional semiconductor devices, CNT FETs are being studied for a wide variety of applications, including logic devices, memory devices, sensors, etc.

The research on these devices typically involves determining various electrical parameters, which may include current-voltage (I-V), pulsed I-V, and capacitance (C) measurements. Characterizing the electrical properties of delicate nanoelectronic devices requires instruments and measurement techniques optimized for low power levels and high measurement sensitivity.