Revolutionary CoolSiC™ Trench MOSFET combining SiC performance with silicon ruggedness

Download Sponsored By :
Revolutionary CoolSiC™ Trench MOSFET combining SiC performance with silicon ruggedness

This paper summarizes selected features of the Infineon CoolSiC™ MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements. The temperature behavior, threshold voltage selection and Vgs_on makes the device easy to operate, in particular for operation in parallel. The switching behavior can be fully controlled by the gate resistor.

The admin of this site has disabled the download button for this page.