The Benefits of Using GaN for RF Applications
Gallium nitride (GaN) is a wide bandgap material that offers significant advantages in high-power radio frequency (RF) applications.
DARPA’s N-ZERO Can Sense with ‘Near-Zero’ Power
DARPA’s near-zero-power sensor technologies have extended battery lifetimes from four weeks to up to four years, but more work needs…
Essential Analog Transceivers Deliver Reliable Connectivity and Highest Uptime for Industrial Networks
MAX33012E improves CAN reliability through integrated fault detection and reporting; MAX33072E expands RS-485 networks with industry’s highest common mode range
Machine Learning Takes UWB Localization to the Next Level
Imec uses machine learning algorithms in chip design to achieve cm accuracy and low-power ultra-wideband (UWB) localization...
Electronic Warfare Spending Expected to Exceed $23Bn in 2028
Evolving system requirements result in strong growth in GaN revenue...
Accelerate Your RF/Wireless Design with Tektronix Solutions
Tektronix delivers the expertise, as well as the signal generation and analysis capabilities required to overcome the most challenging RF,…
STMicroelectronics Joins Zhaga Consortium
ST announced that it has become an Associate member of the Zhaga Consortium to advance the deployment of NFC technology…
Seeking New Wafer Material for 5G
With 5G, the complexity of RF front-end modules is increasing at a bewildering pace. More antennas, more PAs, more filters…
ST’s First LoRa SoC for Connecting Smart Devices
STMicroelectronics' STM32 System-on-Chip Accelerates Creation of Smart Devices with LoRa® IoT Connections
VCOs cover 10–4,350MHz frequency band
The oscillators come in a 0.5in hermetically sealed surface mount package designed to meet MIL-STD-883 and MIL-STD-202 environmental test conditions.