Micron's designs on a megafab in New York, which could include four 600,000-square-foot cleanrooms, are partly the result of recent U.S. legislation.
With HyperRAM 3.0, Infineon is aiming the high-bandwidth, low-pin–count pSRAM-based volatile memory at applications requiring expansion RAM memory.
IC Insights expects foundry giant TSMC to surpass Samsung and take over the top spot in the semiconductor company sales ranking in 3Q22.
Micron Technology announced plans to build the first memory fab in 20 years in the U.S., and is set to invest $15 billion to ensure a domestic supply of the chips used in virtually every electronic product.
Innodisk's DDR4 Ultra Temperature DRAM modules won the Most Innovative Memory Technology award at the 2022 Flash Memory Summit.
UFS 4.0 introduces significant bandwidth and data protection improvements over the earlier version of the standard.