Infineon and Stellantis have signed an MoU towards a potential multi-year supply cooperation for SiC semiconductors.
Navitas Semiconductor and VREMT have opened an advanced, joint R&D power semiconductor laboratory to accelerate EV power-system developments.
A new process called Plasma Polish Dry Etch—or PPDE—is improving the quality of silicon carbide semiconductors.
SiC-based inverters are increasing efficiency in power converters, especially in EVs and renewable applications.
EPC has expanded its selection of off-the-shelf GaN FETs in thermally enhanced QFN packages with the introduction of the 150V EPC2308.
STMicroelectronics is boosting its capacity for SiC devices by build an integrated SiC substrate manufacturing facility in Italy.
EPC's GaN-based inverter reference design enhances motor drive system performance, range, precision, torque, all while simplifying design.
The demand for silicon carbide substrates has experienced massive growth, and SOI wafer supplier Soitec has developed SmartSiC technology to accelerate the adoption of SiC in electric vehicles.
Silicon carbide is becoming an increasingly popular choice for design engineers looking for more robust semiconductor material options. With this recent boom in utilization, where is SiC heading in the years to come?
SemiQ has expanded its portfolio of silicon carbide (SiC) power devices with the release of a second-generation SiC power switch, a 1.2kV 40mΩ SiC MOSFET.