ST and MACOM have successfully developed radio-frequency gallium-nitride-on silicon (RF GaN-on-Si) prototypes.
EPC's EPC2071 offers designers a smaller, more-efficient device than silicon MOSFETs for high-performance, space-constrained applications.
Andy Chuang of GaN Systems talks about the company’s expansion plans in Asia, and the opportunities they are seeing in…
Due to their superior properties, SiC MOSFETs are widely used in power applications in which high switching frequency, voltage, current,…
Kubos is working on improving its cubic GaN technology to make more efficient green, amber, and red LEDs, as well…
EPC will showcase how GaN is transforming power delivery and enabling advanced autonomy across multiple industries at PCIM 2022.
In a panel session on wide-bandgap semiconductors for EVs at the recent Advanced Automotive Tech Forum, three industry experts discussed…
Apart from SiC, where STMicroelectronics has already built a strong momentum, the company is also increasing its focus on GaN.
The EPC2221 is the latest addition to EPC's growing family of GaN transistors and ICs designed for demanding automotive applications.
As GaN devices gain wider adoption in the market, the drain-to-source voltage derating criteria is often one of the first…
SiC MOSFETs' thermal, EMI, space, and noise immunity characteristics help improve the performance of highly integrated power stages, and also…
SiC will play an essential role in the transition from 400V to 800V (and beyond) electric-vehicle systems.