BMW Secures Supply Chain with GaN Capacity Deal
GaN Systems announces an agreement with BMW to secure GaN transistor capacity for accelerating EV production.
Single-chip GaN Gate Driver Boosts Speed and Integration in Industrial, Home Automation
ST's STDRIVEG600 half-bridge gate driver has high current output and 45ns propagation delay to handle high-frequency switching of GaN enhancement-mode…
Performance Gains Outweigh SiC Cost in EV Applications
New silicon carbide (SiC) designs are emerging to meet the growing high-power requirements for electric vehicles.
Applied Materials Accelerate SiC Transition to 200mm
Applied's new technologies are helping silicon carbide chipmakers transition from 150mm wafer production to 200mm production.
UMC and Chipbond to Establish Strategic Cooperation
UMC and Chipbond are establishing a long-term strategic partnership.
Infineon and Panasonic Accelerate GaN Technology Development for 650V Power Devices
Infineon and Panasonic have signed an agreement for the joint development and production of their second generation GaN technology.
ST’s Muggeri Talks Landscape, Road Ahead for SiC and GaN
ST's Francesco Muggeri talks about the role of SiC and GaN in power electronics, their advantages over silicon, and his…
Navitas’ Gene Sheridan Highlights Why GaN Technology for Power Electronics
Navitas Co-Founder and CEO Gene Sheridan talks about the key advantages of using GaN, and how it edges out silicon,…
onsemi to Acquire GT Advanced Technologies
onsemi will acquire silicon carbide producer GT Advanced Technologies for $415 million in cash.
ST Further Extends 150mm SiC Wafer Agreement with Cree
STMicroelectronics expands SiC wafer supply agreement again to over $800 million, and also manufactures first 200mm SiC wafer in-house.
The Politics of SiC Wafers for Power Chips
The wafer supply will be crucial in the chip industry's transition from silicon to SiC semiconductor devices.
Microchip Launches 1700V SiC MOSFETs
Microchip has expanded its SiC portfolio with a family of high-efficiency, high-reliability 1700V silicon carbide MOSFET die, discrete and power…
