The two companies plan to push for more advanced global in-memory market offerings by conducting research on next-generation DRAM.
Solid state dynamic memory maker Samsung Electronics and HANA database developer SAP has opened a joint research centre dedicated for memory solutions to be used in next-generation in-memory computing.
The research centre, a part of an extended partnership between the companies, will focus on in-memory technology development that enables faster data processing and more insightful analyses of rapidly increasing amounts of data. The centre is located at Samsung Electronics' Hwaseong campus in South Korea.
At the research centre, Samsung and SAP will provide global customers with optimised in-memory solutions through the provisioning of extensive technical support including test runs of the SAP HANA platform and evaluation of Samsung’s latest high-performance, high-density memory solutions.
The server system at the centre uses a 24TB in-memory platform, which is based on Samsung’s 128GB DDR4 3DS (three-dimensional stacked) DRAM modules fabricated on the 20nm process node. The companies plan to apply 10nm-class 256GB 3DS DRAM modules next year to improve overall system performance and power efficiency, which is expected to lead to an in-memory system that will offer even greater return on investment for Samsung and SAP customers.
“With our latest 10nm-class DRAM technology, Samsung Electronics will be able to provide more advanced solutions for SAP’s next-generation in-memory system in a highly efficient manner,” said Dr. Young-Hyun Jun, President of the Memory Business, Samsung Electronics.