Qorvo has announced six 50V gallium nitride (GaN) transistors geared to boost power performance for commercial and defence radar, communications systems, avionics, wideband amplifiers and test instrumentation. According to the company, the devices provide remarkable operational and system cost savings from greater system-level efficiency.

Roger Hall, GM of Qorvo's defense & aerospace products business unit, said, "Qorvo has experience applying GaN technology to handheld communications equipment, like wideband handheld radios for first responders, with products that must operate reliably in challenging environmental conditions. Qorvo's QPD1000 recently passed JEDEC's JESD22- A110D Highly Accelerated Temperature/Humidity Stress Test (HAST), proving its reliability in harsh environmental conditions, including severe temperature, humidity and bias."

HAST measures the devices at 130°C, 85% relative humidity and high atmospheric pressure for a minimum of 96 hours.

The QPD1009 and QPD1010 are available in low-cost 3mm x 3mm plastic QFN packages, while the QPD1008(L) and QPD1015(L) are available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10W up to 125W power levels. The wideband input-matched GaN transistors operate from 30MHz to 1215MHz, added the company.