Silicon Motion Technology has introduced what it claims is the first merchant SD memory controller to support SD 6.0 spec and deliver a minimum random...
Sony's latest Xperia offerings pack a 3-layer CMOS image sensor with embedded DRAM, pushing the limits of what can be done with mobile phone cameras.
SST claims that its OTP solution reduces production costs while maximising reliability and programming yield on ON Semiconductor's SP110 (110nm CMOS)...
An unforeseen spike in DRAM and NAND flash ASPs has forced IC Insights to revise its previously slow IC market outlook by over 2x.
Magnetic tunnel junction is critical to advances beyond Moore’s law, but there is a limitation on how fast the material's reversing process can be.
The recent advancement establishes a new means of communication between fibre optics and magnetic devices, according to researchers.
Initial nvNITRO accelerators will be available in capacities of a 1GB and 2GB, based on Everspin’s 256Mb DDR3 ST-MRAM.
Initial applications for nvNITRO accelerators include “anywhere you need very fast write speeds coupled with very low latency,” according to Everspin....
Toshiba’s 64-layer device with 3b-per-cell TLC BiCS Flash Device bundles 1TB 3D flash memory capacity and performance.
MRAM is a promising replacement for SRAM, DRAM and flash that are facing serious scaling challenges as the industry moves to smaller nodes.