An unforeseen spike in DRAM and NAND flash ASPs has forced IC Insights to revise its previously slow IC market outlook by over 2x.
Magnetic tunnel junction is critical to advances beyond Moore’s law, but there is a limitation on how fast the material's reversing process can be.
The recent advancement establishes a new means of communication between fibre optics and magnetic devices, according to researchers.
Initial nvNITRO accelerators will be available in capacities of a 1GB and 2GB, based on Everspin’s 256Mb DDR3 ST-MRAM.
Initial applications for nvNITRO accelerators include “anywhere you need very fast write speeds coupled with very low latency,” according to Everspin....
Toshiba’s 64-layer device with 3b-per-cell TLC BiCS Flash Device bundles 1TB 3D flash memory capacity and performance.
MRAM is a promising replacement for SRAM, DRAM and flash that are facing serious scaling challenges as the industry moves to smaller nodes.
With a lack of experienced engineers and equipment, will China’s decision to push into memory semiconductors be successful?
The collaborative partnership aims to provide critical memory and interface technologies for data centres.
The ReRAM is showing advantages over flash memory, including read latencies of 20 nanoseconds and write latencies of 12 nanoseconds.