The reference design provides a highly isolated SiC MOSFET dual-gate driver switch for evaluating SiC MOSFETs in a number of topologies.
Enevate’s HD-Energy technology delivers 4x energy density to products and processes now certified to UN 38.3, UL 1642, UL 2054, CTIA/IEEE 1725, IEC 62...
Built using the SAM L21 MCU which leverages the Cortex M0+ architecture, the SAM R30 features ultra-low power sleep modes.
650V GaN transistors deliver performance five times better than silicon or silicon carbide products.
The world’s three largest PV markets—China, United States and Japan—are expected to shrink by a combined 9GW in 2017.
Smart appliances can collectively act as a massive battery, offering a lower-cost, lower-emission alternative to backup power generation in the grid.
Murata is after a patented power conversion technology that can give its subsidiary, Peregrine, an efficiency and size (smaller) boost.
The ISOW7841 reduces device operating temperature by up to 40°C, resulting in higher power delivery and higher channel count, according to TI.
Layers of MXenes can be combined to engineer ultrathin electronics, sensors, batteries, supercapacitors and catalysts, researchers say.
The DW Pre Tex diamond-wire sawing for wafers and cells is a one-step, inline wet process that achieves an R< 23% reflection value.