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Porous silicon oxide improves memory prod'n

Posted: 15 Jul 2014     Print Version  Bookmark and Share

Keywords:Rice University  memory  silicon oxide  RRAM 

[Summary of tips] A team of researchers from Rice University has developed what they say is a breakthrough silicon oxide technology aimed at high-density, next-generation computer memory that is one step closer to mass production. According to them, this is a result of a refinement that will allow makers to fabricate devices at room temperature ......
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