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III-V MOSFETs rival Si-based transistors

Posted: 17 Jun 2014  Print Version  Bookmark and Share

Keywords:MOSFET  III-V  silicon 

[Summary of tips] University of California at Santa Barbara (UCSB) researchers presented at the 2014 VLSI Symposium that their metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated with III-V materials compare to, or even exceed the performance of silicon-based devices.In a demonstration supported by the Semiconductor Research ......
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