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2D FET exhibits high electron mobility

Posted: 06 Jun 2014     Print Version  Bookmark and Share

Keywords:2D  transistor  FET 

[Summary of tips] Lawrence Berkeley National Laboratory (Berkeley Lab) has prototyped a field-effect transistor using heterogeneously stacked 2D materials for all of its components: the semiconductor, insulator, and metal layers.Touted as the first fully 2D FET, the device suffers no performance drop-off under high voltages and provides high ele......
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