Global Sources
EE Times-Asia
Stay in touch with EE Times Asia
EE Times-Asia > Amplifiers/Converters

Toshiba upgrades 650W SiC shottky diodes with up to 12A

Posted: 02 Jun 2014     Print Version  Bookmark and Share

Keywords:schottky  silicon carbide  Toshiba  SiC  SBD 

[Summary of tips] Toshiba Corporation's Semiconductor & Storage Products Company has expanded its family of 650V silicon carbide (SiC) schottky barrier diodes (SBD) to include insulated TO-220F-2L package products. The four additional devices make up the 6A, 8A, 10A and 12A line-up.Figure 1: SBD products' packaging and internal circuit informati......
Please login or register with us to view this article>>

Article Comments - Toshiba upgrades 650W SiC shottky di...
*  You can enter [0] more charecters.
*Verify code:


Visit Asia Webinars to learn about the latest in technology and get practical design tips.

Back to Top