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Samsung announces prod'n of 20nm-based 4Gb DDR3 memory

Posted: 20 Mar 2014     Print Version  Bookmark and Share

Keywords:Samsung  DDR3  ArF lithography  manufacturing 

[Summary of tips] Samsung has revealed that it was mass producing what the company claims as the most advanced 4Gb DDR3 memory based on a 20nm process technology using immersion ArF lithography. Sylvie Kadivar, senior director for strategic DRAM marketing at Samsung Semiconductor, said the advancement overcomes the DRAM scaling hurdle, which she......
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