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CEA-Leti reduces memory gate to 16nm via poly-Si spacer

Posted: 17 Mar 2014     Print Version  Bookmark and Share

Keywords:split-gate  memory  CEA-Leti 

[Summary of tips] CEA-Leti has built an ultra-scaled split-gate memory that features a 16nm gate length and over 6V memory windows, delivering good writing and erasing performances.Split-gate flash memory is composed of one access transistor and another memory transistor that contain a charge-trapping layer such as nitride or Si nanocrystals amo......
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