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GAn-on-SiC based HEMT pushes power at 150W

Posted: 17 Feb 2014     Print Version  Bookmark and Share

Keywords:HEMT  GaN on SiC  MACOM 

[Summary of tips] M/A-COM Technology Solutions has launched an RF power transistor, a GaN-on-SiC HEMT for pulsed applications. The MAGX-000025-15000 is gold-metalised, and provides 150W of power output with 18dB of gain and 58 per cent efficiency.Boasting high-breakdown voltages, the MACOM confirms that the device can operate with stability at e......
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