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Imec unveils strained germanium FinFETs

Posted: 16 Dec 2013  Print Version  Bookmark and Share Subscribe 

Keywords:Imec  strained germanium  FinFET  CMOS  SoC 

[Summary of tips] Imec has revealed what it says is the first functional strained germanium (Ge) quantum-well channel pMOS FinFETs, fabricated with a Si Fin replacement process on 300mm Si wafers. According to them, the device shows a possible evolution of the FinFET/trigate architecture for 7nm and 5nm CMOS technologies.Since the 90nm technolog......
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