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Gate drivers target IGBT, SiC FET designs

Posted: 05 Mar 2013  Print Version  Bookmark and Share Subscribe 

Keywords:IGBT  SiC FET  MOSFET 

[Summary of tips] Texas Instruments Inc. has announced what it touts as the industry's first 35V, single-channel, output stage power management gate drivers for insulated-gate bipolar transistors (IGBTs) and silicon carbide (SiC) FETs. The UCC27531 and UCC27532 output stage gate drivers with split output claim to offer the most efficient output ......
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