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ASML still believes EUV at 10nm ideal

Posted: 21 Feb 2013  Print Version  Bookmark and Share Subscribe 

Keywords:EUV  wafers  manufacturing 

[Summary of tips] Consistent progress on the extreme ultraviolet lithography (EUV) front will make it the best option of manufacturing ICs at the 10nm node and below, ASML emphasized during the International Solid State Circuits Conference (ISSCC).Using double patterning and other techniques, EUV can make devices at 7nm and 3nm nodes, Martin van......
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