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Nanoscale engineering to spawn 'universal memory'

Posted: 08 Jan 2013     Print Version  Bookmark and Share

Keywords:nanoscale engineering  Ge2Sb2Te5  GST  PCRAM  universal memory 

[Summary of tips] Researchers at the A*STAR Data Storage Institute have revealed that nanoscale engineering of materials that come in two different guises could lead to faster, smaller and more stable electronic memories. The electronic memory, will have a fast read and write speed, high reliability, low power consumption, and be compatible with......
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