Memory/Storage 
Nanoscale engineering to spawn 'universal memory'
Keywords:nanoscale engineering Ge2Sb2Te5 GST PCRAM universal memory
[Summary of tips] Researchers at the A*STAR Data Storage Institute have revealed that nanoscale engineering of materials that come in two different guises could lead to faster, smaller and more stable electronic memories. The electronic memory, will have a fast read and write speed, high reliability, low power consumption, and be compatible with......Please login or register with us to view this article>>
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