Global Sources
EE Times-Asia
Advanced Search
News
Products
Technical Articles
App Notes
ForumBlogsWhite PapersDatasheetsWebinars
 Challenges & Opportunities 2011   HDTV   PCIe   HDMI   sensor   WiMAX
EE Times-Asia > Manufacturing/Packaging
 
 
Manufacturing/Packaging  

100GHz RF graphene transistor trumps GaAs ICs

Posted: 09 Feb 2010  Print Version  Bookmark and Share Subscribe

Keywords: graphene transistor  carbon electronics  semiconductor 

[Summary of tips] IBM has patterned graphene transistors with a metal top-gate architecture (top) fabricate on 2-inch wafers (bottom) created by the thermal decomposition of silicon carbide.IBM Research has demonstrated a 100GHz transistor. Fabricated on new 2-inch graphene wafers and operating at room temperature, the RF graphene transistors a......
Please login or register with us to view this article>>
 

votes:   Add to Favorites
Karnataka details semiconductor poli...
Panel tackles outsourcing tradeoffs
Article Comments - 100GHz RF graphene transistor trumps...
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
Top Ranked Articles
High-quality Articles
Christmas Wishlist
    Kindle Fire Hot CE innovations at the CES

    All I want for Christmas is any of this year's Best of Innovations Design and Engineering Award honorees! Here's the EE Times pick for Top 10 CE gadgets.

Search EE Times Asia
Peek at Hot Gadgets for 2012
Smart energy "Try explaining to your eight-year-old son that instead of an Xbox, you got him a Wi-Fi enabled smart energy thermostat to help minimize his energy consumption and carbon footprint..."
 

Go to top