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Memory/Storage  

'First' 300mm MTJ fab in U.S. unveiled

Posted: 09 Feb 2009  Print Version  Bookmark and Share Subscribe

Keywords: fab MTJ  Grandis STT-RAM  wafers 300mm 

[Summary of tips] Grandis Inc. announced the first 300mm magnetic tunnel junction (MTJ) fabrication facility in the United States dedicated to spin torque transfer-RAM (STT-RAM) memory technology. The recent additions to its MTJ fab enable Grandis to incorporate STT-RAM into its customers' most advanced semiconductor processes on 300mm wafers.ST......
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