Global Sources
EE Times-Asia
Advanced Search
News
Products
Technical Articles
App Notes
ForumBlogsWhite PapersDatasheetsWebinars
 Challenges & Opportunities 2011     HDTV     PCIe     HDMI     sensor     WiMAX     FPGA
EE Times-Asia > Memory/Storage
 
 
Memory/Storage  

German team touts advance in MRAM tech

Posted: 21 Aug 2008  Print Version  Bookmark and Share Subscribe

Keywords: MRAM advance  volatile memory  DRAM 

[Summary of tips] A research team at the German metrology institute PTB has implemented a switching process in a magnetic medium at the highest speed theoretically possible under physical aspects. The move could help to make magnetic memory devices as fast as their electronic counterparts.One drawback in prevailing computer memory chips, such as......
Please login or register with us to view this article>>
 

votes:   Add to Favorites
Spansion, SMIC forge 43nm fab deal
Samsung leads NAND market ranking in...
Article Comments - German team touts advance in MRAM te...
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
Top Ranked Articles
High-quality Articles
Christmas Wishlist
    Kindle Fire Hot CE innovations at the CES

    All I want for Christmas is any of this year's Best of Innovations Design and Engineering Award honorees! Here's the EE Times pick for Top 10 CE gadgets.

Search EE Times Asia
Peek at Hot Gadgets for 2012
Smart energy "Try explaining to your eight-year-old son that instead of an Xbox, you got him a Wi-Fi enabled smart energy thermostat to help minimize his energy consumption and carbon footprint..."
 

Go to top