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TI bares details of 45nm process

Posted: 07 Feb 2008  Print Version  Bookmark and Share Subscribe

Keywords: 45nm process  strained silicon  immersion lithography  ultra-low K dielectrics 

[Summary of tips] Texas Instruments Inc. has revealed that its 45nm process uses strained silicon, immersion lithography and ultralow-k dielectrics to lower power by 63 percent and increase performance by 55 percent compared with its 65nm process, and double the number of chips produced on each 45nm silicon wafer.At this week's International Sol......
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