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EDA/IP  

IBM pitches air gaps as 'ultimate' dielectric

Posted: 18 Jun 2007  Print Version  Bookmark and Share Subscribe

Keywords: ultralow-k dielectrics  interconnection layers  parasitic capacitance 

[Summary of tips] IBM's air-gap technology uses a polymer that self-organizes into a nanoscale template.The road map to advanced semiconductor nodes calls for ultralow-k dielectrics to reduce parasitic capacitance between adjacent metal lines, especially on interconnection layers, at the 32nm node and beyond. Now, IBM Corp. has vowed to commerci......
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