Memory/Storage 
MRAM puts new spin on process, fab strategy
Keywords: magnetoresistive tunneling MRAM process and fab strategy MRAM operating structure
[Summary of tips] According to Freescale, the major advantage of its MRAM technology is that it is a back-end addition to conventional CMOS and is therefore suitable for embedded use. The Freescale MRAM cell has multilayer MTJs placed diagonally between two high-current write line conductors, which are formed in metal 4 and metal 5, and arranged......Please login or register with us to view this article>>
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