Manufacturing/Packaging 
MRAM puts new spin on process, fab strategy
Keywords: magnetoresistive tunneling MRAM process and fab strategy MRAM operating structure
[Summary of tips] According to Freescale, the major advantage of its MRAM technology is that it is a back-end addition to conventional CMOS and is therefore suitable for embedded use. The Freescale MRAM cell has multilayer MTJs placed diagonally between two high-current write line conductors, which are formed in metal 4 and metal 5, and arranged......Please login or register with us to view this article>>
|
Not yet registered?
 Register FREE to view unlimited features, tutorials and products, and enable any content alert service! |
Registered already? Login to view complete content.
|
Article Comments - MRAM puts new spin on process, fab s...
Visitor0530
(To avoid code verification, simply login or register with us. It is fast and free!)
Top Ranked Articles
Christmas Wishlist
All I want for Christmas is anything on this year's Best of Innovations Design and Engineering Award list!
Search EE Times Asia
Peek at Hot Gadgets for 2012
