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EE Times-Asia > Memory/Storage

Hynix claims 'fastest' 512Mbit mobile DDR SDRAM

Posted: 19 Mar 2007  Print Version  Bookmark and Share Subscribe 

Keywords:SDRAM  DDR  memory  NAND flash  ECC 

[Summary of tips] Hynix Semiconductor Inc. claims it has developed the industry's fastest 185MHz 512Mbit mobile DDR SDRAM with error correction code (ECC). The built-in ECC, similar to that used in NAND flash, ensures data integrity while reducing current consumption by almost 50 percent.1.5Gbps throughputAt 185MHz clock speed, said to be the fa......
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