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Circuit designer takes control over LOD parameters
Keywords: length of diffusion effects circuit simulation PDK functionality LOD effects Larry Aschliman
[Summary of tips] Length-of-diffusion (LOD) effects in MOS BSIM models can impact analog circuit simulations at 130nm and below. These effects, also known as stress effects from the shallow trench isolation defining the transistor, are captured in the simulation by the instance parameters sa, sb and sd, the distances from the gates to the edge o......Please login or register with us to view this article>>
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