RF/Microwave 
GaN transistors target cellular, WiMAX bands
Keywords: RFMD gallium nitride GaN high electron mobility transistor HEMT
[Summary of tips] RF Micro Devices (RFMD) has introduced a family of gallium nitride (GaN) high electron mobility transistor (HEMT) high-power transistors and announced it is sampling to top-tier cellular infrastructure and WiMAX base station customers. The company said the sampling of these transistors represents the achievement of its baseline......Please login or register with us to view this article>>
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