Global Sources
EE Times-Asia
Advanced Search
News
Products
Technical Articles
App Notes
ForumBlogsWhite PapersDatasheetsWebinars
 Challenges & Opportunities 2011   HDTV   PCIe   HDMI   sensor   WiMAX
EE Times-Asia > Manufacturing/Packaging
 
 
Manufacturing/Packaging  

'First' 2-inch AlN substrates for high-power RF apps

Posted: 17 May 2006  Print Version  Bookmark and Share Subscribe

Keywords: AlN substrate  aluminum nitride  crystal 

[Summary of tips] Crystal IS announced the release of what it claims to be the first 2-inch aluminum nitride (AlN) substrates for use in high power RF electronics, blue and UV optoelectronics.According to Crystal, it developed a manufacturing technique to grow a crystal which, when sliced and polished, can be used as a semiconductor substrate fo......
Please login or register with us to view this article>>
 

votes:   Add to Favorites
Thermal dielectric material offers h...
0.35μm CMOS process allows volt...
Article Comments - 'First' 2-inch AlN substrates for hi...
Comments:  
*  You can enter [0] more charecters.
*Verify code:
 
Top Ranked Articles
High-quality Articles
Christmas Wishlist
    Kindle Fire Hot CE innovations at the CES

    All I want for Christmas is any of this year's Best of Innovations Design and Engineering Award honorees! Here's the EE Times pick for Top 10 CE gadgets.

Search EE Times Asia
Peek at Hot Gadgets for 2012
Smart energy "Try explaining to your eight-year-old son that instead of an Xbox, you got him a Wi-Fi enabled smart energy thermostat to help minimize his energy consumption and carbon footprint..."
 

Go to top