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GaAs dielectric points past silicon
Keywords: David Lammers
[Summary of tips] As performance gains get harder to squeeze out of silicon-based CMOS, research labs around the world are reporting promising results from a range of ultrafast devices—based on strained germanium, gallium arsenide (GaAs), indium antimonide and other materials—that may come into play in the second half of the next dec......Please login or register with us to view this article>>
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