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Toshiba touts power output of GaN-based FET
Keywords: microwave communications fet transistor gaas fet
[Summary of tips] BROKEN_TABLE_ HIDDEN_END -->Toshiba Corp. has developed a gallium nitride (GaN) based power field effect transistor that it says far surpasses the operating performance of the gallium arsenide FET widely used in base stations for terrestrial and satellite microwave communications.The company claims output power of 174W at 6GHz......Please login or register with us to view this article>>
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