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Freescale, Soitec claim 45nm designs with strained SOI

Posted: 14 Apr 2005     Print Version  Bookmark and Share

Keywords:soitec  45nm cmos devices  soi substrates 

[Summary of tips] BROKEN_TABLE_ HIDDEN_END -->A collaborative effort between Freescale Semiconductor Inc. and Soitec Group has resulted in the ability to build 45nm CMOS devices using strained silicon-on-insulator (SOI) substrates, the companies claimed.By combining Soitec's Smart Cut SOI technology and Freescale's advanced CMOS process capabil......
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