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Samsung to double flash capacity, debuts 90nm NAND

Posted: 06 Apr 2004     Print Version  Bookmark and Share

Keywords:samsung electronics  flash-memory  hynix  infineon  stmicroelectronics 

[Summary of tips] Looking to extend its lead in flash memory, South Korea's Samsung Electronics Co. Ltd plans to double its flash capacity and has begun shipping its first NAND part based on a new 90nm process technology.On the product front, Samsung has begun shipping a 2-gigabit NAND device, built around the 90nm process, said Tom Quinn, VP of......
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