Amplifiers/Converters 
TDI to sample breakthrough p-type GaN substrates
Keywords: Technologies and Devices Int. Inc. (TDI) a privately owned developer and manufacturer of novel compound semiconductor materials has announced a breakthrough in GaN compound semiconductor material growth technology by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.
[Summary of tips] Technologies and Devices Int. Inc. (TDI), a privately owned developer and manufacturer of novel compound semiconductor materials, has announced a breakthrough in GaN compound semiconductor material growth technology, by demonstrating 2-inch diameter GaN templates with p-type electrical conductivity.GaN is the compound semicondu......Please login or register with us to view this article>>
|
Not yet registered?
 Register FREE to view unlimited features, tutorials and products, and enable any content alert service! |
Registered already? Login to view complete content.
|
Article Comments - TDI to sample breakthrough p-type Ga...
Visitor0213
(To avoid code verification, simply login or register with us. It is fast and free!)
Top Ranked Articles
Christmas Wishlist
All I want for Christmas is anything on this year's Best of Innovations Design and Engineering Award list!
Search EE Times Asia
Peek at Hot Gadgets for 2012
