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EDA/IP  

The do's and don'ts of using MOS-Gated transistors

Posted: 04 May 2000  Print Version  Bookmark and Share Subscribe

Keywords: international rectifier ir  mos-gated  transistors  hexfet  power electronics 

[Summary of tips] In this application note, some of the most common do's and don'ts of using power HEXFET are described. The objective is to help the user get the most out of these devices, while reducing on-the-job learning time to minimum.View the PDF document for more information.
 

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